1MBI200U4H-120L-50
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Краткое описание:
1.2kV 200A IGBT Module, 150°C, Panel Mount, RoHS Compliant
Дополнительная информация
The 1MBI200U4H-120L-50 is a high-power insulated gate bipolar transistor (IGBT) module from Fuji Electric. It features a collector-emitter breakdown voltage of 1.2kV and a maximum collector current of 200A. The module is designed for panel mount applications and has a maximum operating temperature of 150°C. It is also compliant with RoHS regulations.
| RoHS | Compliant |
| Mount | Panel |
| Width | 62mm |
| Height | 30mm |
| Length | 108mm |
| Package/Case | Module |
| RoHS Compliant | Yes |
| Max Collector Current | 200A |
| Max Power Dissipation | 1.04kW |
| Max Operating Temperature | 150°C |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Collector Emitter Breakdown Voltage | 1.2kV |
