1ZB180(Q)

1ZB180(Q) - Toshiba
Краткое описание: 180 V 1 W Silicon Zener Diode

Дополнительная информация

Silicon diffused zener diode provides constant-voltage regulation and transient suppression in a plastic molded package. The 180 V nominal zener voltage has a 162 V to 198 V specified range with ±10% tolerance. Average power dissipation is rated at 1.0 W, and peak reverse power dissipation is 200 W for a 200 µs pulse. The device operates over a -40 °C to 150 °C junction temperature range and has a maximum forward voltage of 1.2 V at 0.2 A.
Weight 0.18g
Device Type Silicon diffused zener diode
Zener Voltage 180 typV
Zener Voltage Maximum 198V
Zener Voltage Minimum 162V
Forward Voltage Maximum 1.2V
Reverse Current Maximum 10µA
Zener Impedance Maximum 500Ω
Zener Voltage Tolerance ±10%
Average Power Dissipation 1.0W
Storage Temperature Range -40 to 150°C
Junction Temperature Range -40 to 150°C
Zener Impedance Test Current 1.5mA
Forward Current Test Condition 0.2A
Peak Reverse Power Dissipation 200 at tw = 200 µsW
Reverse Voltage Test Condition 144V
Temperature Coefficient of Zener Voltage 161 typ, 255 maxmV/°C

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