2DA1213O-13
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PNP BJT Transistor, 50V VCEO, 2A IC, 160MHz, SOT-89-3
Дополнительная информация
PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 50V Collector-Emitter Breakdown Voltage (VCEO) and a 2A Continuous Collector Current (IC). Offers a minimum DC current gain (hFE) of 70 and a transition frequency of 160MHz. Packaged in a 3-lead SOT-89 plastic surface mount package, this component operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 1W. Compliant with RoHS and REACH SVHC standards.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 2.5mm |
| Height | 1.5mm |
| Length | 4.5mm |
| Weight | 0.004603oz |
| hFE Min | 70 |
| Polarity | PNP |
| Frequency | 160MHz |
| Packaging | Tape and Reel |
| Package/Case | SOT-89-3 |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Power Dissipation | 1W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| Transition Frequency | 160MHz |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 2A |
| Max Power Dissipation | 1W |
| Gain Bandwidth Product | 160MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | -5V |
| Continuous Collector Current | -2A |
| Collector Base Voltage (VCBO) | 50V |
| Collector-emitter Voltage-Max | 500mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | -500mV |
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