2DA1774QLP-7
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Краткое описание:
PNP BJT Transistor, 40V VCEO, 100mA IC, 100MHz, DFN
Дополнительная информация
PNP Silicon Bipolar Junction Transistor, designed for small signal applications. Features a 40V Collector-Emitter Breakdown Voltage (VCEO) and 50V Collector-Base Voltage (VCBO). Offers a maximum collector current of 100mA and a transition frequency of 100MHz. Packaged in an ultra-small, leadless DFN1006-3 surface-mount package with 3 pins. Operates across a temperature range of -55°C to 150°C with a power dissipation of 250mW.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 0.6mm |
| Height | 0.47mm |
| Length | 1mm |
| hFE Min | 120 |
| Polarity | PNP |
| Frequency | 100MHz |
| Packaging | Tape and Reel |
| Package/Case | DFN |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Power Dissipation | 250mW |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| Transition Frequency | 100MHz |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 100mA |
| Max Power Dissipation | 250mW |
| Gain Bandwidth Product | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 5V |
| Collector Base Voltage (VCBO) | 50V |
| Collector-emitter Voltage-Max | 200mV |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector Emitter Breakdown Voltage | 40V |
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