2DA1797-13
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PNP BJT Transistor, 3A I(C), 50V V(BR)CEO, SOT-89, 160MHz
Дополнительная информация
PNP Silicon Bipolar Junction Transistor (BJT) for general-purpose applications. Features a 3A maximum collector current and 50V collector-emitter breakdown voltage. Operates with a transition frequency of 160MHz and a minimum hFE of 82. Packaged in a SOT-89 surface-mount plastic package, this component offers a maximum power dissipation of 2W and operates across a temperature range of -55°C to 150°C. RoHS compliant and lead-free.
| RoHS | Compliant |
| Type | General Purpose |
| Mount | Surface Mount |
| Width | 2.5mm |
| Height | 1.5mm |
| Length | 4.5mm |
| Weight | 0.001834oz |
| hFE Min | 82 |
| Polarity | PNP |
| Frequency | 160MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Termination | SMD/SMT |
| Package/Case | SOT-89 |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Power Dissipation | 2W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 160MHz |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 3A |
| Max Power Dissipation | 2W |
| Gain Bandwidth Product | 160MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 6V |
| Collector Base Voltage (VCBO) | 50V |
| Collector-emitter Voltage-Max | 350mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | -100mV |
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