2DB1188R-13
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Краткое описание:
PNP BJT Transistor, 32V VCEO, 2A IC, 120MHz, SOT-89
Дополнительная информация
PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 32V Collector-Emitter Breakdown Voltage (VCEO) and a maximum collector current of 2A. Offers a minimum DC current gain (hFE) of 180 and a transition frequency of 120MHz. Packaged in a SOT-89 surface mount case, this component operates within a temperature range of -55°C to 150°C and has a power dissipation of 1W. It is RoHS and REACH SVHC compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 2.48mm |
| Height | 1.5mm |
| Length | 4.5mm |
| Weight | 0.001834oz |
| hFE Min | 180 |
| Polarity | PNP |
| Frequency | 120MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-89 |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Power Dissipation | 1W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| Transition Frequency | 120MHz |
| Max Breakdown Voltage | 32V |
| Max Collector Current | 2A |
| Max Power Dissipation | 1W |
| Gain Bandwidth Product | 120MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 5V |
| Collector Base Voltage (VCBO) | 40V |
| Collector-emitter Voltage-Max | 800mV |
| Collector Emitter Voltage (VCEO) | 32V |
| Collector Emitter Breakdown Voltage | 32V |
| Collector Emitter Saturation Voltage | 800mV |
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