2DB1689-7
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Краткое описание:
PNP BJT Transistor, 1.5A I(C), 12V V(BR)CEO, 300MHz, SOT-323
Дополнительная информация
PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 1.5A maximum collector current and 12V collector-emitter breakdown voltage. Operates with a 300MHz transition frequency and a minimum hFE of 270. Packaged in a 3-pin plastic SOT-323 surface-mount package, this RoHS compliant component is supplied on tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.3mm |
| Height | 1mm |
| Length | 2.15mm |
| Weight | 0.000212oz |
| hFE Min | 270 |
| Polarity | PNP |
| Frequency | 300MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Termination | SMD/SMT |
| Package/Case | SOT-323 |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Power Dissipation | 500mW |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 300MHz |
| Max Breakdown Voltage | 12V |
| Max Collector Current | 1.5A |
| Max Power Dissipation | 300mW |
| Gain Bandwidth Product | 300MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 6V |
| Collector Base Voltage (VCBO) | 15V |
| Collector-emitter Voltage-Max | 200mV |
| Collector Emitter Voltage (VCEO) | 12V |
| Collector Emitter Breakdown Voltage | 12V |
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