2DC4617R-7-F

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2DC4617R-7-F - Diodes
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Краткое описание: NPN BJT Transistor, 50V VCEO, 150mA IC, 180MHz, SOT-523
Производитель Diodes
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 50V Collector-Emitter Breakdown Voltage (VCEO) and 150mA Continuous Collector Current (IC). Operates with a 180MHz Gain Bandwidth Product and a maximum power dissipation of 150mW. Housed in an ultra-miniature SOT-523 plastic package for surface mounting. Compliant with RoHS and REACH SVHC standards.
RoHS Compliant
Mount Surface Mount
Width 0.8mm
Height 0.75mm
Length 1.6mm
Weight 7.1E-05oz
hFE Min 180
Polarity NPN
Frequency 180MHz
Lead Free Lead Free
Packaging Tape and Reel
Package/Case SOT-523
Max Frequency 180MHz
Current Rating 150mA
RoHS Compliant Yes
DC Rated Voltage 50V
Package Quantity 3000
Power Dissipation 150mW
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant Yes
Transition Frequency 180MHz
Max Breakdown Voltage 50V
Max Collector Current 150mA
Max Power Dissipation 150mW
Gain Bandwidth Product 180MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 7V
Continuous Collector Current 150mA
Collector Base Voltage (VCBO) 60V
Collector-emitter Voltage-Max 400mV
Collector Emitter Voltage (VCEO) 50V
Collector Emitter Breakdown Voltage 50V
Collector Emitter Saturation Voltage 400mV

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