2DD1664Q-13
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NPN BJT Transistor, 1A I(C), 32V V(BR)CEO, 280MHz fT, SOT89-3L
Дополнительная информация
NPN Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a maximum collector current of 1A and a collector-emitter breakdown voltage of 32V. Offers a minimum DC current gain (hFE) of 120 and a transition frequency of 280MHz. Packaged in a SOT89-3L (TO-243AA) surface-mount plastic package. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 1W.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 2.48mm |
| Height | 1.5mm |
| Length | 4.5mm |
| Weight | 0.001834oz |
| hFE Min | 120 |
| Polarity | NPN |
| Packaging | Tape and Reel |
| Package/Case | TO-243AA |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| Transition Frequency | 280MHz |
| Max Breakdown Voltage | 32V |
| Max Collector Current | 1A |
| Max Power Dissipation | 1W |
| Gain Bandwidth Product | 280MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 5V |
| Collector Base Voltage (VCBO) | 40V |
| Collector-emitter Voltage-Max | 400mV |
| Collector Emitter Breakdown Voltage | 32V |
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