2DD1766Q-13
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NPN BJT Transistor, 32V VCEO, 220MHz, 1W, SOT-89, SM
Дополнительная информация
NPN bipolar junction transistor for small signal applications. Features a 32V collector-emitter breakdown voltage and 40V collector-base voltage. Operates with a maximum collector current of 2A and a power dissipation of 1W. Offers a minimum DC current gain (hFE) of 120 and a transition frequency of 220MHz. Packaged in a SOT-89 surface-mount plastic case, this silicon transistor is RoHS and REACH SVHC compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 2.48mm |
| Height | 1.5mm |
| Length | 4.5mm |
| Weight | 0.001834oz |
| hFE Min | 120 |
| Polarity | NPN |
| Frequency | 220MHz |
| Packaging | Tape and Reel |
| Package/Case | SOT-89 |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Power Dissipation | 1W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| Transition Frequency | 220MHz |
| Max Collector Current | 2A |
| Max Power Dissipation | 1W |
| Gain Bandwidth Product | 220MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 5V |
| Collector Base Voltage (VCBO) | 40V |
| Collector-emitter Voltage-Max | 800mV |
| Collector Emitter Voltage (VCEO) | 32V |
| Collector Emitter Breakdown Voltage | 32V |
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