2DD2098R-13
Производится
Увеличить
Краткое описание:
NPN BJT Transistor, 10A I(C), 20V V(CE), 220MHz, SOT-89, SM
Дополнительная информация
NPN silicon bipolar junction transistor for surface mount applications. Features a 20V collector-emitter breakdown voltage (VCEO), 50V collector-base voltage (VCBO), and 6V emitter-base voltage (VEBO). Offers a maximum collector current of 10A and a power dissipation of 1W. Operates within a temperature range of -55°C to 150°C with a transition frequency of 220MHz. Packaged in a SOT-89 plastic package, it is RoHS and REACH SVHC compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 2.5mm |
| Height | 1.5mm |
| Length | 4.5mm |
| Weight | 0.001834oz |
| Polarity | NPN |
| Frequency | 220MHz |
| Packaging | Tape and Reel |
| Package/Case | SOT-89 |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Power Dissipation | 1W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| Transition Frequency | 220MHz |
| Max Breakdown Voltage | 20V |
| Max Collector Current | 10A |
| Max Power Dissipation | 1W |
| Gain Bandwidth Product | 220MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 6V |
| Collector Base Voltage (VCBO) | 50V |
| Collector-emitter Voltage-Max | 1V |
| Collector Emitter Voltage (VCEO) | 20V |
| Collector Emitter Breakdown Voltage | 20V |
| Collector Emitter Saturation Voltage | 1V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
