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NPN BJT Transistor, 1A, 30V, 270MHz, SOT-323, SMD
Дополнительная информация
NPN silicon bipolar junction transistor (BJT) for small signal applications. Features a maximum collector current of 1A and a collector-emitter breakdown voltage of 30V. Offers a gain bandwidth product of 270MHz and a maximum power dissipation of 300mW. Packaged in a compact SOT-323 surface-mount plastic package, suitable for tape and reel deployment. Operates across a temperature range of -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.3mm |
| Height | 1mm |
| Length | 2.15mm |
| Weight | 0.000212oz |
| hFE Min | 270 |
| Polarity | NPN |
| Frequency | 270MHz |
| Packaging | Tape and Reel |
| Termination | SMD/SMT |
| Package/Case | SOT-323 |
| Max Frequency | 270MHz |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Power Dissipation | 500mW |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 270MHz |
| Max Breakdown Voltage | 30V |
| Max Collector Current | 1A |
| Max Power Dissipation | 300mW |
| Gain Bandwidth Product | 270MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 6V |
| Collector Base Voltage (VCBO) | 30V |
| Collector-emitter Voltage-Max | 350mV |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | 350mV |
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