2DD2679-13
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Краткое описание:
NPN BJT Transistor, 30V VCEO, 2A IC, 240MHz, SOT-89, SMD
Дополнительная информация
NPN bipolar junction transistor in a SOT-89 plastic package, designed for surface mounting. Features a maximum collector current of 2A, collector-emitter breakdown voltage of 30V, and a transition frequency of 240MHz. Offers a minimum DC current gain (hFE) of 270 and a maximum collector-emitter saturation voltage of 370mV. Operates across a temperature range of -55°C to 150°C with a power dissipation of 2W.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 2.5mm |
| Height | 1.5mm |
| Length | 4.5mm |
| Series | 2DD2 |
| Weight | 0.001834oz |
| hFE Min | 270 |
| Polarity | NPN |
| Frequency | 240MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Termination | SMD/SMT |
| Package/Case | SOT-89 |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Power Dissipation | 2W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 240MHz |
| Max Collector Current | 2A |
| Max Power Dissipation | 2W |
| Gain Bandwidth Product | 240MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 6V |
| Collector Base Voltage (VCBO) | 30V |
| Collector-emitter Voltage-Max | 370mV |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | 370mV |
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