2N2222A-QR-B
Производится
Увеличить
Краткое описание:
NPN BJT Transistor 50V 0.8A 250MHz TO-18
Дополнительная информация
NPN bipolar junction transistor (BJT) for general-purpose applications. Features a 50V collector-emitter voltage, 0.8A maximum collector current, and 500mW power dissipation. This single-element transistor is housed in a 3-pin TO-18 metal package with through-hole mounting. Operating temperature range is -65°C to 200°C, with a maximum transition frequency of 250MHz.
| PCB | 3 |
| ECCN | EAR99 |
| PPAP | No |
| Type | NPN |
| EU RoHS | Yes |
| Category | Bipolar Small Signal |
| HTS Code | 8541210075 |
| Mounting | Through Hole |
| Cage Code | 57027, 73138,U1395 |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| Schedule B | 8541210080 |
| Package/Case | TO-18 |
| AEC Qualified | No |
| Configuration | Single |
| RoHS Versions | 2011/65/EU |
| Pin Pitch (mm) | 1.27 |
| Package Material | Metal |
| Basic Package Type | Through Hole |
| Package Description | Transistor Outline Package |
| Package Family Name | TO-206-AA |
| Package Height (mm) | 5.33(Max) |
| Radiation Hardening | No |
| Package Diameter (mm) | 5.84(Max) |
| Minimum DC Current Gain | [email protected]@10V|50@1mA@1V|75@10mA@10V|100@150mA@10V|50@150mA@1V|40@500mA@10V |
| Seated Plane Height (mm) | 5.33(Max) |
| Max Operating Temperature | 200°C |
| Maximum Power Dissipation | 500mW |
| Min Operating Temperature | -65°C |
| Number of Elements per Chip | 1 |
| Maximum DC Collector Current | 0.8A |
| Maximum Emitter Base Voltage | 6V |
| Maximum Transition Frequency | 250MHz |
| Maximum Collector Base Voltage | 75V |
| Maximum Collector-Emitter Voltage | 50V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
