2N2369A-QR

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2N2369A-QR - TT
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Краткое описание: NPN BJT Transistor, 15V, 0.2A, 360mW, TO-18, 3-Pin
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Дополнительная информация

NPN bipolar junction transistor (BJT) for general-purpose applications. Features a maximum collector-emitter voltage of 15V and a maximum DC collector current of 0.2A. Maximum power dissipation is 360mW. This single-element transistor is housed in a 3-pin TO-18 metal package with through-hole mounting. Operating temperature range is -65°C to 200°C.
PCB 3
ECCN EAR99
PPAP No
Type NPN
Category Bipolar Small Signal
Mounting Through Hole
Cage Code 57027, 73138,U1395
Pin Count 3
Automotive No
Lead Shape Through Hole
Schedule B 8541210080
Package/Case TO-18
AEC Qualified No
Configuration Single
RoHS Versions 2002/95/EC
Pin Pitch (mm) 1.27
Package Material Metal
Basic Package Type Through Hole
Package Description Transistor Outline Package
Package Family Name TO-206-AA
Package Height (mm) 5.33(Max)
Radiation Hardening No
Package Diameter (mm) 5.84(Max)
Minimum DC Current Gain 40@[email protected]|40@10mA@1V|30@[email protected]|20@100mA@1V
Seated Plane Height (mm) 5.33(Max)
Max Operating Temperature 200°C
Maximum Power Dissipation 360mW
Min Operating Temperature -65°C
Number of Elements per Chip 1
Maximum DC Collector Current 0.2A
Maximum Emitter Base Voltage 4.5V
Maximum Collector Base Voltage 40V
Maximum Collector-Emitter Voltage 15V

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