2N2484CSM-QR-B

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2N2484CSM-QR-B - TT
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Краткое описание: NPN BJT Transistor, 60V, 0.05A, 360mW, Ceramic SMT
Производитель TT
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN Bipolar Junction Transistor (BJT) for surface mount applications. Features a 60V collector-emitter voltage and 50mA collector current. This single-element transistor offers a maximum power dissipation of 360mW and operates across a wide temperature range of -65°C to 200°C. Packaged in a 3-pin Ceramic LLCC (CLLCC-1) with dimensions of 3.04mm x 2.58mm x 1.42mm (Max), it utilizes a non-lead-frame SMT design.
PCB 3
PPAP No
Type NPN
Category Bipolar Power
Material Si
Mounting Surface Mount
Cage Code 57027, 73138,U1395
Pin Count 3
Automotive No
Lead Shape No Lead
Package/Case CLLCC-1
AEC Qualified No
Configuration Single
RoHS Versions 2002/95/EC
Pin Pitch (mm) 0.96
Package Material Ceramic
Basic Package Type Non-Lead-Frame SMT
Package Width (mm) 2.58
Package Family Name LLCC
Package Height (mm) 1.42(Max)
Package Length (mm) 3.04
Radiation Hardening No
Minimum DC Current Gain 30@1uA@5V|100@10uA@5V|175@100uA@5V|200@500uA@5V|250@1mA@5V
Seated Plane Height (mm) 1.42(Max)
Max Operating Temperature 200°C
Maximum Power Dissipation 360mW
Min Operating Temperature -65°C
Number of Elements per Chip 1
Maximum DC Collector Current 0.05A
Maximum Emitter Base Voltage 6V
Maximum Collector Base Voltage 60V
Maximum Collector-Emitter Voltage 60V

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