2N2907AHR

Производится
2N2907AHR - Stmicroelectronics
Увеличить
Краткое описание: PNP BJT Transistor 60V 0.6A Through Hole TO-18
Производитель Stmicroelectronics
Статус производства Производится (ACTIVE)

Дополнительная информация

PNP Bipolar Junction Transistor (BJT) for general-purpose applications. Features a 60V collector-emitter voltage and 0.6A continuous collector current. Housed in a 3-pin TO-18 metal package with through-hole mounting. Operates across a wide temperature range from -65°C to 200°C. Silicon material ensures reliable performance with a maximum power dissipation of 400mW.
PCB 3
ECCN EAR99
PPAP No
Type PNP
EU RoHS No
Category Bipolar Power
Material Si
Mounting Through Hole
Cage Code SCR76
Pin Count 3
Automotive No
Lead Shape Through Hole
Schedule B 8541210080
Package/Case TO-18
AEC Qualified No
Configuration Single
RoHS Versions 2011/65/EU, 2015/863
Package Material Metal
Basic Package Type Through Hole
Package Description Transistor Outline Package
Package Family Name TO-206-AA
Package Height (mm) 5.3(Max)
Radiation Hardening No
Package Diameter (mm) 5.8(Max)
Minimum DC Current Gain [email protected]@10V|100@10mA@10V|100@150mA@10V|100@150mA@10V|50@500mA@10V
Max Operating Temperature 200°C
Maximum Power Dissipation 400mW
Min Operating Temperature -65°C
Number of Elements per Chip 1
Maximum DC Collector Current 0.6A
Maximum Emitter Base Voltage 5V
Maximum Collector Base Voltage 60V
Maximum Collector-Emitter Voltage 60V

Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.