2N3055AG

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2N3055AG - Onsemi
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Краткое описание: NPN BJT Transistor 60V 15A 115W TO-3
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN bipolar junction transistor (BJT) in a TO-204-3 package, rated for 60V collector-emitter voltage and 15A continuous collector current. Features a maximum power dissipation of 115W and a transition frequency of 6MHz. Operates across a wide temperature range from -65°C to 200°C. This component is lead-free and RoHS compliant.
RoHS Compliant
Width 0.335inch
Height 1.05inch
Length 1.55inch
hFE Min 10
Polarity NPN
Frequency 6MHz
Lead Free Lead Free
Packaging Tray
Package/Case TO-204-3
Max Frequency 6MHz
Current Rating 15A
RoHS Compliant Yes
DC Rated Voltage 60V
Package Quantity 100
Power Dissipation 115W
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant No
Transition Frequency 6MHz
Max Collector Current 15A
Max Power Dissipation 115W
Gain Bandwidth Product 6MHz
Max Operating Temperature 200°C
Min Operating Temperature -65°C
Emitter Base Voltage (VEBO) 7V
Collector Base Voltage (VCBO) 200V
Collector-emitter Voltage-Max 5V
Collector Emitter Voltage (VCEO) 60V
Collector Emitter Breakdown Voltage 60V
Collector Emitter Saturation Voltage 1.1V

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