2N3055G

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2N3055G - Onsemi
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Краткое описание: NPN BJT Power Transistor, 60V, 15A, 115W, TO-204
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN bipolar junction power transistor featuring a 60V collector-emitter voltage and a 15A maximum collector current. This component offers a 2.5MHz transition frequency and a minimum hFE of 20, housed in a TO-204 package. With a maximum power dissipation of 115W and an operating temperature range of -65°C to 200°C, it is RoHS compliant and lead-free.
RoHS Compliant
Width 26.67mm
Height 8.51mm
Length 39.37mm
hFE Min 20
Polarity NPN
Frequency 2.5MHz
Lead Free Lead Free
Packaging Tray
Package/Case TO-204-3
Max Frequency 2.5MHz
Current Rating 15A
RoHS Compliant Yes
DC Rated Voltage 60V
Package Quantity 100
Power Dissipation 115W
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant No
Transition Frequency 2.5MHz
Max Collector Current 15A
Max Power Dissipation 115W
Gain Bandwidth Product 2.5MHz
Max Operating Temperature 200°C
Min Operating Temperature -65°C
Emitter Base Voltage (VEBO) 7V
Collector Base Voltage (VCBO) 100V
Collector-emitter Voltage-Max 3V
Collector Emitter Voltage (VCEO) 60V
Collector Emitter Breakdown Voltage 60V
Collector Emitter Saturation Voltage 3V

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