2N3439CSM4R-QR-B

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2N3439CSM4R-QR-B - TT
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Краткое описание: NPN BJT 350V 1A 4-Pin Ceramic SMT Transistor
Производитель TT
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN Bipolar Junction Transistor (BJT) for surface mount applications. Features a 350V collector-emitter voltage, 1A maximum DC collector current, and 800mW maximum power dissipation. This single-element, ceramic CLLCC-3 package offers a 4-pin configuration with a 1.27mm pin pitch. Operating temperature range is -65°C to 200°C.
PCB 4
ECCN EAR99
PPAP No
Type NPN
Category Bipolar Small Signal
Material Si
Mounting Surface Mount
Cage Code 57027, 73138,U1395
Pin Count 4
Automotive No
Lead Shape No Lead
Schedule B 8541210080
Package/Case CLLCC-3
AEC Qualified No
Configuration Single
RoHS Versions 2002/95/EC
Pin Pitch (mm) 1.27
Package Material Ceramic
Basic Package Type Non-Lead-Frame SMT
Package Width (mm) 5.59
Package Family Name LLCC
Package Height (mm) 1.65
Package Length (mm) 3.81
Radiation Hardening No
Minimum DC Current Gain 30@2mA@10V|40@20mA@10V
Seated Plane Height (mm) 1.65
Max Operating Temperature 200°C
Maximum Power Dissipation 800mW
Min Operating Temperature -65°C
Number of Elements per Chip 1
Maximum DC Collector Current 1A
Maximum Emitter Base Voltage 7V
Maximum Collector Base Voltage 450V
Maximum Collector-Emitter Voltage 350V

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