2N3503-JQR-B
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Краткое описание:
PNP BJT Transistor, 60V, TO-39, Through Hole
Дополнительная информация
PNP Bipolar Junction Transistor (BJT) for general-purpose applications. Features a maximum collector-emitter voltage of 60V and a maximum power dissipation of 700mW. This single-element transistor is housed in a 3-pin TO-39 metal package with through-hole mounting and a pin pitch of 2.54mm. Operating temperature range spans from -65°C to 200°C, with a typical transition frequency of 2.5MHz.
| PCB | 3 |
| ECCN | EAR99 |
| PPAP | No |
| Type | PNP |
| Jedec | TO-205AD |
| Category | Bipolar Power |
| HTS Code | 8541210095 |
| Material | Si |
| Mounting | Through Hole |
| Cage Code | 57027, 73138,U1395 |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| Schedule B | 8541210080 |
| Package/Case | TO-39 |
| AEC Qualified | No |
| Configuration | Single |
| RoHS Versions | 2002/95/EC |
| Pin Pitch (mm) | 2.54 |
| Package Material | Metal |
| Basic Package Type | Through Hole |
| Package Description | Transistor Outline Package |
| Package Family Name | TO-205-AD |
| Package Height (mm) | 6.6(Max) |
| Radiation Hardening | No |
| Package Diameter (mm) | 9.4(Max) |
| Minimum DC Current Gain | 140@10mA@10V|115@50mA@1V|135@1mA@10V|100@150mA@10V|80@10uA@10V|50@50mA@1V |
| Seated Plane Height (mm) | 6.6(Max) |
| Max Operating Temperature | 200°C |
| Maximum Power Dissipation | 700mW |
| Min Operating Temperature | -65°C |
| Number of Elements per Chip | 1 |
| Maximum Emitter Base Voltage | 5V |
| Maximum Transition Frequency | 2.5(Typ)MHz |
| Maximum Collector Base Voltage | 60V |
| Maximum Collector-Emitter Voltage | 60V |
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