2N3637-QR-A
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Краткое описание:
PNP BJT Transistor 175V 1A 1000mW TO-39
Дополнительная информация
PNP Bipolar Junction Transistor (BJT) for through-hole mounting in a TO-39 metal package. Features a maximum collector-emitter voltage of 175V, maximum collector current of 1A, and 1000mW power dissipation. Operates across a temperature range of -65°C to 200°C with a minimum transition frequency of 100MHz. Offers a DC current gain ranging from 55 to 100 depending on operating conditions.
| PCB | 3 |
| ECCN | EAR99 |
| PPAP | No |
| Type | PNP |
| Jedec | TO-205AD |
| Category | Bipolar Power |
| HTS Code | 8541290075 |
| Material | Si |
| Mounting | Through Hole |
| Cage Code | 57027, 73138,U1395 |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| Schedule B | 8541290080 |
| Package/Case | TO-39 |
| AEC Qualified | No |
| Configuration | Single |
| RoHS Versions | 2002/95/EC |
| Pin Pitch (mm) | 2.54 |
| Package Material | Metal |
| Basic Package Type | Through Hole |
| Package Description | Transistor Outline Package |
| Package Family Name | TO-205-AD |
| Package Height (mm) | 6.6(Max) |
| Radiation Hardening | No |
| Package Diameter (mm) | 9.4(Max) |
| Minimum DC Current Gain | [email protected]@10V|90@1mA@10V|100@10mA@10V|100@50mA@10V|60@150mA@10V |
| Seated Plane Height (mm) | 6.6(Max) |
| Max Operating Temperature | 200°C |
| Maximum Power Dissipation | 1000mW |
| Min Operating Temperature | -65°C |
| Number of Elements per Chip | 1 |
| Maximum DC Collector Current | 1A |
| Maximum Emitter Base Voltage | 5V |
| Maximum Transition Frequency | 100(Min)MHz |
| Maximum Collector Base Voltage | 175V |
| Maximum Collector-Emitter Voltage | 175V |
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