2N3766-JQR-A
Производится
Увеличить
Краткое описание:
NPN BJT 60V 4A 25W TO-66 Transistor
Дополнительная информация
NPN bipolar junction transistor for through-hole mounting, featuring a TO-66 metal package with 3 pins and a tab. This single-element silicon transistor offers a maximum collector-emitter voltage of 60V and a maximum DC collector current of 4A, with a power dissipation of 25000mW. Key specifications include a minimum DC current gain of 30 at 50mA/5V and a maximum transition frequency of 10MHz. Operating temperature range is -65°C to 200°C.
| PCB | 2 |
| Tab | Tab |
| ECCN | EAR99 |
| PPAP | No |
| Type | NPN |
| Jedec | TO-213AA |
| Category | Bipolar Power |
| HTS Code | 8541290095 |
| Material | Si |
| Mounting | Through Hole |
| Cage Code | 57027, 73138,U1395 |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| Schedule B | 8541290080 |
| Package/Case | TO-66 |
| AEC Qualified | No |
| Configuration | Single |
| RoHS Versions | 2002/95/EC |
| Pin Pitch (mm) | 5.33(Max) |
| Package Material | Metal |
| Basic Package Type | Through Hole |
| Package Description | Transistor Outline Package |
| Package Family Name | TO-213-AA |
| Package Height (mm) | 8.64(Max) |
| Package Length (mm) | 31.99(Max) |
| Radiation Hardening | No |
| Minimum DC Current Gain | 30@50mA@5V|40@500mA@5V|20@1A@10V |
| Seated Plane Height (mm) | 8.64(Max) |
| Max Operating Temperature | 200°C |
| Maximum Power Dissipation | 25000mW |
| Min Operating Temperature | -65°C |
| Number of Elements per Chip | 1 |
| Maximum DC Collector Current | 4A |
| Maximum Emitter Base Voltage | 6V |
| Maximum Transition Frequency | 10(Typ)MHz |
| Maximum Collector Base Voltage | 80V |
| Maximum Collector-Emitter Voltage | 60V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
