2N3859A

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2N3859A - Onsemi
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Краткое описание: NPN BJT Transistor 60V 500mA 250MHz TO-92
Производитель Onsemi
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

NPN bipolar junction transistor (BJT) for through-hole mounting in a TO-92 package. Features a maximum collector-emitter voltage (VCEO) of 60V and a maximum collector current of 500mA. Offers a minimum DC current gain (hFE) of 100 and a transition frequency of 250MHz. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 625mW. Lead-free and RoHS compliant.
RoHS Compliant
Mount Through Hole
Series 2N3859A
hFE Min 100
Polarity NPN
Frequency 250MHz
Lead Free Lead Free
Packaging Bulk
Package/Case TO-92
Current Rating 500A
RoHS Compliant Yes
DC Rated Voltage 60V
Package Quantity 2000
Power Dissipation 625mW
Number of Elements 1
Transition Frequency 250MHz
Max Collector Current 500mA
Max Power Dissipation 625mW
Gain Bandwidth Product 250MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 6V
Collector Base Voltage (VCBO) 60V
Collector-emitter Voltage-Max 60V
Collector Emitter Voltage (VCEO) 60V
Collector Emitter Breakdown Voltage 60V

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