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NPN BJT Transistor, 40V, 0.2A, 625mW, TO-92, Through Hole
Дополнительная информация
NPN Bipolar Junction Transistor (BJT) for general-purpose applications. Features a maximum collector-emitter voltage of 40V and a maximum collector current of 0.2A, with a power dissipation of 625mW. This single-element silicon transistor is housed in a 3-pin TO-92 plastic package with through-hole mounting. Key specifications include a minimum DC current gain ranging from 40 to 100 and a maximum transition frequency of 300MHz. Operates within a temperature range of -65°C to 150°C.
| PCB | 3 |
| ECCN | EAR99 |
| PPAP | No |
| Type | NPN |
| Jedec | TO-92 |
| EU RoHS | Yes with Exemption |
| Category | Bipolar Small Signal |
| HTS Code | 8541210095 |
| Material | Si |
| Mounting | Through Hole |
| Cage Code | 55464 |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| Schedule B | 8541100040 |
| Package/Case | TO-92 |
| AEC Qualified | No |
| Configuration | Single |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 1.27 |
| Package Material | Plastic |
| Basic Package Type | Through Hole |
| Package Weight (g) | 0.206 |
| Package Width (mm) | 4.19(Max) |
| Package Description | Plastic Header Style Package |
| Package Family Name | TO-92 |
| Package Height (mm) | 5.33(Max) |
| Package Length (mm) | 5.21(Max) |
| Minimum DC Current Gain | [email protected]@1V|70@1mA@1V|100@10mA@1V|60@50mA@1V|30@100mA@1V |
| Seated Plane Height (mm) | 5.33(Max) |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 625mW |
| Min Operating Temperature | -65°C |
| Number of Elements per Chip | 1 |
| Maximum DC Collector Current | 0.2A |
| Maximum Emitter Base Voltage | 6V |
| Maximum Transition Frequency | 300(Min)MHz |
| Maximum Collector Base Voltage | 60V |
| Maximum Collector-Emitter Voltage | 40V |
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