2N3904TA

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2N3904TA - Onsemi
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Краткое описание: NPN BJT Transistor, 40V, 200mA, 300MHz, TO-92
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN Bipolar Junction Transistor (BJT) for general-purpose applications. Features a 40V collector-emitter voltage (VCEO) and a 200mA maximum collector current. Offers a minimum DC current gain (hFE) of 100 and a transition frequency (fT) of 300MHz. Packaged in a TO-92 through-hole mount, this component operates from -55°C to 150°C with a maximum power dissipation of 625mW. RoHS compliant and lead-free.
RoHS Compliant
Mount Through Hole
Width 4.19mm
Height 5.33mm
Length 5.2mm
Weight 0.24g
hFE Min 100
Polarity NPN
Frequency 300MHz
Lead Free Lead Free
Packaging Ammo Pack
Package/Case TO-92
Max Frequency 300MHz
Current Rating 200mA
RoHS Compliant Yes
DC Rated Voltage 40V
Package Quantity 2000
Power Dissipation 625mW
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant No
Transition Frequency 300MHz
Max Breakdown Voltage 40V
Max Collector Current 200mA
Max Power Dissipation 625mW
Gain Bandwidth Product 300MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 6V
Collector Base Voltage (VCBO) 60V
Collector-emitter Voltage-Max 300mV
Collector Emitter Voltage (VCEO) 40V
Collector Emitter Breakdown Voltage 40V
Collector Emitter Saturation Voltage 300mV

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