2N3906TAR
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Краткое описание:
PNP BJT Transistor, TO-92, 40V, 200mA, 250MHz
Дополнительная информация
PNP bipolar junction transistor in a TO-92-3 package, suitable for through-hole mounting. Features a maximum collector current of 200mA and a collector-emitter voltage of 40V. Offers a minimum DC current gain (hFE) of 100 and a transition frequency of 250MHz. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 625mW. This RoHS compliant component is supplied in an ammo pack with a package quantity of 2000.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.19mm |
| Height | 5.33mm |
| Length | 5.2mm |
| Weight | 0.24g |
| hFE Min | 100 |
| Polarity | PNP |
| Frequency | 250MHz |
| Lead Free | Lead Free |
| Packaging | Ammo Pack |
| Package/Case | TO-92-3 |
| Max Frequency | 250MHz |
| Current Rating | -200mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | -40V |
| Package Quantity | 2000 |
| Power Dissipation | 625mW |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Transition Frequency | 250MHz |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 200mA |
| Max Power Dissipation | 625mW |
| Gain Bandwidth Product | 250MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | -5V |
| Collector Base Voltage (VCBO) | -40V |
| Collector-emitter Voltage-Max | 400mV |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | -250mV |
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