2N4123TF
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NPN BJT Transistor 30V 200mA 250MHz TO-92
Дополнительная информация
NPN bipolar junction transistor (BJT) in a TO-92-3 package, designed for through-hole mounting. Features a maximum collector current of 200mA and a collector-emitter breakdown voltage of 30V. Offers a minimum DC current gain (hFE) of 50 and a transition frequency of 250MHz. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 625mW. This RoHS compliant component is lead-free and supplied on tape and reel.
| RoHS | Compliant |
| Mount | Through Hole |
| hFE Min | 50 |
| Polarity | NPN |
| Frequency | 250MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | TO-92-3 |
| Current Rating | 200mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | 40V |
| Package Quantity | 2000 |
| Power Dissipation | 625mW |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Transition Frequency | 250MHz |
| Max Collector Current | 200mA |
| Max Power Dissipation | 625mW |
| Gain Bandwidth Product | 250MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 5V |
| Collector Base Voltage (VCBO) | 40V |
| Collector-emitter Voltage-Max | 300mV |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
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