2N4393-E3

Снят с производства
2N4393-E3 - Vishay(Siliconix)
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Краткое описание: N-Channel JFET, 5mA ID, 100R Rds(on), TO-18, Through Hole
Производитель Vishay(Siliconix)
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

N-channel JFET transistor for general-purpose small signal applications. Features a TO-18 hermetically sealed package with 3 pins, suitable for through-hole mounting. Offers a continuous drain current of 5mA, a current rating of 50mA, and a drain-to-source resistance of 100 Ohms. Operates within a temperature range of -55°C to 200°C with a maximum power dissipation of 1.8W. Includes a gate-to-source voltage of -40V and an input capacitance of 14pF.
RoHS Compliant
Mount Through Hole
Width 5.84mm
Height 5.33mm
Length 5.84mm
Polarity N-CHANNEL
Packaging Bulk
Package/Case TO-206AA
Polarization N
Current Rating 50mA
RoHS Compliant Yes
Package Quantity 200
Input Capacitance 14pF
Power Dissipation 1.8W
Turn-On Delay Time 15ns
On-State Resistance 100R
Radiation Hardening No
Turn-Off Delay Time 50ns
Reach SVHC Compliant Unknown
Max Power Dissipation 1.8W
Max Operating Temperature 200°C
Min Operating Temperature -55°C
Drain to Source Resistance 100R
Gate to Source Voltage (Vgs) -40V
Continuous Drain Current (ID) 5mA

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