2N4919G
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PNP BJT Transistor, 60V, 1A, 3MHz, TO-225
Дополнительная информация
PNP Bipolar Junction Transistor (BJT) in a TO-225 package, designed for medium power applications. Features a 60V collector-emitter breakdown voltage and a 1A continuous collector current rating, with a maximum collector current of 3A. Offers a minimum DC current gain (hFE) of 40 and a transition frequency of 3MHz. Operates within a temperature range of -65°C to 150°C, with a maximum power dissipation of 30W. This component is RoHS compliant and supplied in bulk packaging.
| RoHS | Compliant |
| hFE Min | 40 |
| Polarity | PNP |
| Frequency | 3MHz |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Termination | Through Hole |
| Halogen Free | Halogen Free |
| Package/Case | TO-225-3 |
| Current Rating | 1A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -60V |
| Package Quantity | 500 |
| Power Dissipation | 30W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 3MHz |
| Max Collector Current | 3A |
| Max Power Dissipation | 30W |
| Gain Bandwidth Product | 3MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Emitter Base Voltage (VEBO) | 5V |
| Collector Base Voltage (VCBO) | 60V |
| Collector-emitter Voltage-Max | 600mV |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 600mV |
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