2N5154S1
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Краткое описание:
NPN BJT 80V 5A 3.3W Si Single SMD Transistor
Дополнительная информация
NPN Bipolar Junction Transistor (BJT) for surface mount applications. Features 80V collector-emitter voltage, 5A continuous collector current, and 3300mW maximum power dissipation. Operates from -65°C to 200°C with a 3-pin SMD-0.5 package. Offers DC current gain of 40 at 5A/5V, 70 at 2.5A/5V, and 50 at 50mA/5V.
| PCB | 3 |
| ECCN | EAR99 |
| PPAP | No |
| Type | NPN |
| EU RoHS | No |
| Category | Bipolar Power |
| Material | Si |
| Mounting | Surface Mount |
| Cage Code | SCR76 |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | No Lead |
| Schedule B | 8541290080 |
| Package/Case | SMD-0.5 |
| AEC Qualified | No |
| Configuration | Single |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Basic Package Type | Non-Lead-Frame SMT |
| Package Width (mm) | 10.16 |
| Package Description | Surface Mount Device |
| Package Family Name | SMD |
| Package Height (mm) | 2.62 |
| Package Length (mm) | 7.52 |
| Radiation Hardening | No |
| Minimum DC Current Gain | 40@5A@5V|[email protected]@5V|50@50mA@5V |
| Seated Plane Height (mm) | 3 |
| Max Operating Temperature | 200°C |
| Maximum Power Dissipation | 3300mW |
| Min Operating Temperature | -65°C |
| Number of Elements per Chip | 1 |
| Maximum DC Collector Current | 5A |
| Maximum Emitter Base Voltage | 6V |
| Maximum Collector Base Voltage | 100V |
| Maximum Collector-Emitter Voltage | 80V |
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