2N5190G

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2N5190G - Onsemi
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Краткое описание: 4A 40V NPN BJT Power Transistor TO-225
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN bipolar junction power transistor in a TO-225 package. Features a maximum collector current of 4A and a collector-emitter breakdown voltage of 40V. Offers a minimum DC current gain (hFE) of 25 and a transition frequency of 2MHz. Designed for operation between -65°C and 150°C with a maximum power dissipation of 40W. This component is RoHS and Halogen Free compliant.
RoHS Compliant
hFE Min 25
Polarity NPN
Frequency 2MHz
Lead Free Lead Free
Packaging Bulk
Halogen Free Halogen Free
Package/Case TO-225-3
Max Frequency 2MHz
Current Rating 4A
RoHS Compliant Yes
DC Rated Voltage 40V
Package Quantity 500
Power Dissipation 40W
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant No
Transition Frequency 2MHz
Max Collector Current 4A
Max Power Dissipation 40W
Gain Bandwidth Product 2MHz
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 40V
Collector-emitter Voltage-Max 1.4V
Collector Emitter Voltage (VCEO) 40V
Collector Emitter Breakdown Voltage 40V

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