2N5195G
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PNP BJT Transistor, 80V, 4A, 2MHz, TO-225
Дополнительная информация
PNP Bipolar Junction Power Transistor featuring a maximum collector current of 4A and a collector-emitter voltage of 80V. This component offers a transition frequency of 2MHz and a minimum DC current gain (hFE) of 20. Housed in a TO-225 package, it supports a maximum power dissipation of 40W and operates within a temperature range of -65°C to 150°C. The transistor is RoHS compliant and supplied in bulk packaging.
| RoHS | Compliant |
| Width | 0.118inch |
| Height | 0.437inch |
| Length | 0.307inch |
| hFE Min | 20 |
| Polarity | PNP |
| Frequency | 2MHz |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Halogen Free | Halogen Free |
| Package/Case | TO-225-3 |
| Max Frequency | 2MHz |
| Current Rating | -4A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -80V |
| Package Quantity | 500 |
| Power Dissipation | 40W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 2MHz |
| Max Collector Current | 4A |
| Max Power Dissipation | 40W |
| Gain Bandwidth Product | 2MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Emitter Base Voltage (VEBO) | 5V |
| Collector Base Voltage (VCBO) | 80V |
| Collector-emitter Voltage-Max | 1.4V |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 1.4V |
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