2N5210TAR
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Краткое описание:
NPN BJT 50V 100mA 30MHz TO-92 Transistor
Дополнительная информация
NPN bipolar junction transistor (BJT) for through-hole mounting in a TO-92 package. Features a 50V collector-emitter voltage (VCEO) and a maximum collector current of 100mA. Offers a minimum DC current gain (hFE) of 200 and a transition frequency of 30MHz. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 625mW. This RoHS compliant component is supplied in an ammo pack.
| RoHS | Compliant |
| Mount | Through Hole |
| hFE Min | 200 |
| Polarity | NPN |
| Frequency | 30MHz |
| Lead Free | Lead Free |
| Packaging | Ammo Pack |
| Package/Case | TO-92-3 |
| Current Rating | 100mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | 50V |
| Package Quantity | 2000 |
| Power Dissipation | 625mW |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Transition Frequency | 30MHz |
| Max Collector Current | 100mA |
| Max Power Dissipation | 625mW |
| Gain Bandwidth Product | 30MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 4.5V |
| Collector Base Voltage (VCBO) | 50V |
| Collector-emitter Voltage-Max | 700mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 700mV |
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