2N5210_D81Z
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Краткое описание:
NPN BJT TO-92 50V 100mA 30MHz 200hFE
Дополнительная информация
NPN bipolar junction transistor (BJT) in a TO-92 package, designed for through-hole mounting. Features a maximum collector current of 100mA and a collector-emitter voltage (VCEO) of 50V. Offers a minimum DC current gain (hFE) of 200 and a transition frequency of 30MHz. Operates across a temperature range of -55°C to 150°C, with a maximum power dissipation of 625mW. This component is lead-free and RoHS compliant.
| RoHS | Compliant |
| Mount | Through Hole |
| Series | 2N5210 |
| hFE Min | 200 |
| Polarity | NPN |
| Frequency | 30MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | TO-92-3 |
| Current Rating | 100mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | 50V |
| Package Quantity | 2000 |
| Power Dissipation | 625mW |
| Number of Elements | 1 |
| Transition Frequency | 30MHz |
| Max Collector Current | 100mA |
| Max Power Dissipation | 625mW |
| Gain Bandwidth Product | 30MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 4.5V |
| Collector Base Voltage (VCBO) | 50V |
| Collector-emitter Voltage-Max | 700mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 700mV |
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