2N5415
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PNP BJT, 200V, 1A, 15MHz, TO-39 Small Signal Transistor
Дополнительная информация
PNP Silicon Bipolar Junction Transistor (BJT) in a TO-39 package. Features a maximum collector current of 1A and a collector-emitter voltage (VCEO) of 200V. Offers a transition frequency of 15MHz and a minimum DC current gain (hFE) of 30. Maximum power dissipation is 1W, with operating temperatures ranging from -65°C to 200°C. This through-hole component is RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 9.4mm |
| Height | 6.6mm |
| Length | 9.4mm |
| Current | 200mA |
| Voltage | 300V |
| hFE Min | 30 |
| Diameter | 9.4mm |
| Polarity | PNP |
| Frequency | 15MHz |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Package/Case | TO-39 |
| Max Frequency | 15MHz |
| Current Rating | -1A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -200V |
| Package Quantity | 100 |
| Power Dissipation | 1W |
| Number of Elements | 1 |
| Transition Frequency | 15MHz |
| Max Collector Current | 1A |
| Max Power Dissipation | 1W |
| Gain Bandwidth Product | 15MHz |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Emitter Base Voltage (VEBO) | -4V |
| Collector Base Voltage (VCBO) | 200V |
| Collector-emitter Voltage-Max | 2.5V |
| Collector Emitter Voltage (VCEO) | 200V |
| Collector Emitter Breakdown Voltage | 200V |
| Collector Emitter Saturation Voltage | -2.5V |
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