2N5550RLRP

Снят с производства
2N5550RLRP - Onsemi
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Краткое описание: 140V 600mA NPN Si BJT TO-92 Small Signal Transistor
Производитель Onsemi
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

NPN Bipolar Junction Transistor (BJT) for small signal applications. Features a 140V collector-emitter voltage (VCEO) and 600mA maximum collector current. Offers a transition frequency of 300MHz and a minimum hFE of 60. Packaged in a TO-92-3 through-hole mount configuration. Operates across a temperature range of -55°C to 150°C.
RoHS Not Compliant
Mount Through Hole
hFE Min 60
Polarity NPN
Frequency 300MHz
Lead Free Contains Lead
Packaging Tape and Reel
Package/Case TO-92-3
Current Rating 600mA
RoHS Compliant No
DC Rated Voltage 140V
Package Quantity 2000
Power Dissipation 625mW
Number of Elements 1
Transition Frequency 300MHz
Max Collector Current 600mA
Max Power Dissipation 625mW
Gain Bandwidth Product 300MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 6V
Collector Base Voltage (VCBO) 160V
Collector-emitter Voltage-Max 250mV
Collector Emitter Voltage (VCEO) 140V
Collector Emitter Breakdown Voltage 140V
Collector Emitter Saturation Voltage 250mV

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