2N5550TFR

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2N5550TFR - Onsemi
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Краткое описание: NPN BJT Transistor, 140V VCEO, 600mA IC, 300MHz, TO-92
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

Small Signal NPN Bipolar Junction Transistor (BJT) designed for through-hole mounting. Features a 140V Collector-Emitter Voltage (VCEO) and a 600mA maximum collector current. Operates with a minimum hFE of 60 and a transition frequency of 300MHz. Packaged in a TO-92-3 case on a 2000-piece tape and reel, this lead-free and RoHS compliant component offers a wide operating temperature range from -55°C to 150°C.
RoHS Compliant
Mount Through Hole
Width 3.86mm
Height 4.58mm
Length 4.58mm
Weight 0.24g
hFE Min 60
Polarity NPN
Frequency 300MHz
Lead Free Lead Free
Packaging Tape and Reel
Package/Case TO-92-3
Max Frequency 300MHz
Current Rating 600mA
RoHS Compliant Yes
DC Rated Voltage 140V
Package Quantity 1
Power Dissipation 625mW
Number of Elements 1
Radiation Hardening No
Transition Frequency 300MHz
Max Breakdown Voltage 140V
Max Collector Current 600mA
Max Power Dissipation 625mW
Gain Bandwidth Product 300MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 6V
Collector Base Voltage (VCBO) 160V
Collector-emitter Voltage-Max 250mV
Collector Emitter Voltage (VCEO) 140V
Collector Emitter Breakdown Voltage 140V
Collector Emitter Saturation Voltage 250mV

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