2N5663-JQR

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2N5663-JQR - TT
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Краткое описание: NPN BJT 300V 2A 1W TO-39 Transistor
Производитель TT
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Дополнительная информация

NPN bipolar junction transistor, single configuration, designed for through-hole mounting. Features a maximum collector-emitter voltage of 300V, maximum collector current of 2A, and a maximum power dissipation of 1000mW. Operates within a temperature range of -65°C to 200°C, with a minimum DC current gain of 25. Housed in a TO-39 metal package with 3 pins and a pin pitch of 2.54mm.
PCB 3
ECCN EAR99
PPAP No
Type NPN
Jedec TO-205AD
Category Bipolar Power
Mounting Through Hole
Cage Code 57027, 73138,U1395
Pin Count 3
Automotive No
Lead Shape Through Hole
Schedule B 8541290080
Package/Case TO-39
AEC Qualified No
Configuration Single
RoHS Versions 2002/95/EC
Pin Pitch (mm) 2.54
Package Material Metal
Basic Package Type Through Hole
Package Description Transistor Outline Package
Package Family Name TO-205-AD
Package Height (mm) 6.6(Max)
Radiation Hardening No
Package Diameter (mm) 9.4(Max)
Minimum DC Current Gain 25@50mA@2V|[email protected]@5V|15@1A@5V|5@2A@5V
Seated Plane Height (mm) 6.6(Max)
Max Operating Temperature 200°C
Maximum Power Dissipation 1000mW
Min Operating Temperature -65°C
Number of Elements per Chip 1
Maximum DC Collector Current 2A
Maximum Emitter Base Voltage 6V
Maximum Collector Base Voltage 400V
Maximum Collector-Emitter Voltage 300V

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