2N6077-JQR

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2N6077-JQR - TT
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Краткое описание: NPN BJT 275V 7A 45W TO-66 Transistor
Производитель TT
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN bipolar junction transistor, single configuration, designed for through-hole mounting. Features a TO-66 metal package with 3 pins and a tab, offering a maximum collector-emitter voltage of 275V and a maximum DC collector current of 7A. Maximum power dissipation is 45000mW, with a minimum DC current gain of 12 at 1.2A and 1V. This power transistor operates with a typical transition frequency of 1MHz.
PCB 2
Tab Tab
ECCN EAR99
PPAP No
Type NPN
Jedec TO-213AA
Category Bipolar Power
HTS Code 8541290095
Mounting Through Hole
Cage Code 57027, 73138,U1395
Pin Count 3
Automotive No
Lead Shape Through Hole
Schedule B 8541290080
Package/Case TO-66
AEC Qualified No
Configuration Single
RoHS Versions 2002/95/EC
Pin Pitch (mm) 5.33(Max)
Package Material Metal
Basic Package Type Through Hole
Package Description Transistor Outline Package
Package Family Name TO-213-AA
Package Height (mm) 8.64(Max)
Package Length (mm) 31.99(Max)
Radiation Hardening No
Minimum DC Current Gain [email protected]@1V
Seated Plane Height (mm) 8.64(Max)
Maximum Power Dissipation 45000mW
Number of Elements per Chip 1
Maximum DC Collector Current 7A
Maximum Transition Frequency 1(Typ)MHz
Maximum Collector-Emitter Voltage 275V

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