2N6260

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2N6260 - Central Semiconductor
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Краткое описание: NPN BJT Transistor 40V 4A TO-66 Single 3-Pin
Производитель Central Semiconductor
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN bipolar junction transistor, single configuration, designed for through-hole mounting. Features a TO-66 metal package with 3 pins and a tab, offering a maximum collector-emitter voltage of 40V and a maximum collector current of 4A. This silicon transistor boasts a maximum power dissipation of 29000mW and a minimum DC current gain of 20 at 1.5A, with a transition frequency of 0.8MHz minimum. Package dimensions include a length of 24.43mm (max), width of 17.78mm, and height of 8.64mm (max).
PCB 2
Tab Tab
ECCN EAR99
PPAP No
Type NPN
Jedec TO-213AA
Category Bipolar Power
HTS Code 8541290095
Material Si
Mounting Through Hole
Cage Code 55464
Pin Count 3
Automotive No
Lead Shape Through Hole
Schedule B 8541290080
Package/Case TO-66
AEC Qualified No
Configuration Single
RoHS Versions 2002/95/EC
Pin Pitch (mm) 5.33(Max)
Package Material Metal
Basic Package Type Through Hole
Package Weight (g) 5.84
Package Width (mm) 17.78
Package Description Transistor Outline Package
Package Family Name TO-213-AA
Package Height (mm) 8.64(Max)
Package Length (mm) 24.43(Max) + 7.36
Radiation Hardening No
Minimum DC Current Gain [email protected]
Seated Plane Height (mm) 8.64(Max)
Maximum Power Dissipation 29000mW
Number of Elements per Chip 1
Maximum DC Collector Current 4A
Maximum Transition Frequency 0.8(Min)MHz
Maximum Collector Base Voltage 50V
Maximum Collector-Emitter Voltage 40V

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