2N6274-JQR

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2N6274-JQR - TT
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Краткое описание: NPN BJT 100V 50A TO-3 Power Transistor
Производитель TT
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Дополнительная информация

NPN Bipolar Junction Transistor (BJT) designed for power applications. Features a maximum collector-emitter voltage of 100V and a continuous collector current of 50A. This single-element transistor is housed in a TO-3 metal package, a through-hole component with a 3-pin configuration and a tab for enhanced thermal management. Minimum DC current gain is 25 at 20A and 10V, with a typical transition frequency of 10MHz.
PCB 2
Tab Tab
ECCN EAR99
PPAP No
Type NPN
Jedec TO-204-AA
Category Bipolar Power
HTS Code 8541290095
Mounting Through Hole
Cage Code 57027, 73138,U1395
Pin Count 3
Automotive No
Lead Shape Through Hole
Schedule B 8541290080
Package/Case TO-3
AEC Qualified No
Configuration Single
RoHS Versions 2002/95/EC
Pin Pitch (mm) 11.18(Max)
Package Material Metal
Basic Package Type Through Hole
Package Width (mm) 26.67(Max)
Package Description Transistor Outline Package
Package Family Name TO-204-AA
Package Height (mm) 11.43(Max)
Package Length (mm) 39.94(Max)
Radiation Hardening No
Minimum DC Current Gain 25@20A@10V
Seated Plane Height (mm) 11.43(Max)
Maximum Power Dissipation 150000mW
Number of Elements per Chip 1
Maximum DC Collector Current 50A
Maximum Transition Frequency 10(Typ)MHz
Maximum Collector-Emitter Voltage 100V

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