2N6287G

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2N6287G - Onsemi
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Краткое описание: PNP BJT 100V 20A 160W TO-3 Tray
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

PNP Darlington Bipolar Junction Transistor (BJT) with a 100V Collector-Emitter Voltage (VCEO) and 20A Continuous Collector Current. Features a maximum power dissipation of 160W and a low 2V Collector-Emitter Saturation Voltage. Encased in a TO-204-3 package with tin, matte contact plating, this component operates from -65°C to 200°C. RoHS compliant and lead-free.
RoHS Compliant
Width 26.67mm
Height 8.51mm
Length 39.37mm
Polarity PNP
Lead Free Lead Free
Packaging Tray
Package/Case TO-204-3
Current Rating -20A
RoHS Compliant Yes
Contact Plating Tin, Matte
DC Rated Voltage -100V
Package Quantity 100
Power Dissipation 160W
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant No
Max Collector Current 20A
Max Power Dissipation 160W
Max Operating Temperature 200°C
Min Operating Temperature -65°C
Emitter Base Voltage (VEBO) 5V
Continuous Collector Current 20A
Collector Base Voltage (VCBO) 100V
Collector-emitter Voltage-Max 3V
Collector Emitter Voltage (VCEO) 100V
Collector Emitter Breakdown Voltage 100V
Collector Emitter Saturation Voltage 2V

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