2N6466

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2N6466 - Central Semiconductor
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Краткое описание: NPN BJT TO-66 120V 4A 3-Pin Through Hole Power Transistor
Производитель Central Semiconductor
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN Bipolar Junction Transistor (BJT) for power applications. Features a maximum collector-emitter voltage of 120V and a continuous collector current of 4A. Dissipates up to 40W, with a minimum DC current gain of 15 at 1.5A. This single-element transistor is housed in a TO-66 (TO-213AA) metal package with a through-hole mounting style and three pins.
PCB 2
Tab Tab
ECCN EAR99
PPAP No
Type NPN
Jedec TO-213AA
Category Bipolar Power
HTS Code 8541290095
Material Si
Mounting Through Hole
Cage Code 55464
Pin Count 3
Automotive No
Lead Shape Through Hole
Schedule B 8541290080
Package/Case TO-66
AEC Qualified No
Configuration Single
RoHS Versions 2002/95/EC
Pin Pitch (mm) 5.33(Max)
Package Material Metal
Basic Package Type Through Hole
Package Weight (g) 5.84
Package Width (mm) 17.78
Package Description Transistor Outline Package
Package Family Name TO-213-AA
Package Height (mm) 8.64(Max)
Package Length (mm) 24.43(Max) + 7.36
Radiation Hardening No
Minimum DC Current Gain [email protected]
Seated Plane Height (mm) 8.64(Max)
Maximum Power Dissipation 40000mW
Number of Elements per Chip 1
Maximum DC Collector Current 4A
Maximum Transition Frequency 5(Min)MHz
Maximum Collector Base Voltage 130V
Maximum Collector-Emitter Voltage 120V

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