2N6488G

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2N6488G - Onsemi
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Краткое описание: NPN BJT, 80V, 15A, 5MHz, TO-220
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN Power Bipolar Junction Transistor (BJT) featuring an 80V collector-emitter breakdown voltage and a 15A continuous collector current. This component offers a 5MHz transition frequency and a minimum DC current gain (hFE) of 20. Packaged in a TO-220-3 configuration, it operates within a temperature range of -65°C to 150°C and has a maximum power dissipation of 1.8W. The transistor is RoHS compliant and supplied in a 50-piece tube.
RoHS Compliant
Width 4.82mm
Height 9.28mm
Length 10.28mm
Series 2N6488
hFE Min 20
Polarity NPN
Frequency 5MHz
Lead Free Lead Free
Packaging Rail/Tube
Package/Case TO-220-3
Max Frequency 5MHz
Current Rating 15A
RoHS Compliant Yes
DC Rated Voltage 80V
Package Quantity 50
Power Dissipation 1.8W
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant No
Transition Frequency 5MHz
Max Collector Current 15A
Max Power Dissipation 1.8W
Gain Bandwidth Product 5MHz
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 90V
Collector-emitter Voltage-Max 3.5V
Collector Emitter Voltage (VCEO) 80V
Collector Emitter Breakdown Voltage 80V
Collector Emitter Saturation Voltage 3.5V

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