2N6660-E3

2N6660-E3 - Vishay(Siliconix)
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Краткое описание: N-CH JFET 60V 0.99A TO-205AD Through Hole

Дополнительная информация

N-channel Junction Field-Effect Transistor (JFET) in a TO-205AD package for through-hole mounting. Features a 60V drain-to-source breakdown voltage and a continuous drain current of 990mA. Offers a low drain-to-source resistance of 3 Ohms and a gate-to-source voltage rating of 20V. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 6.25W. Tin-matte contact plating and RoHS compliance ensure reliable performance.
RoHS Compliant
Mount Through Hole
Width 8.15mm
Height 6.6mm
Length 9.4mm
Polarity N-CHANNEL
Packaging Bulk
Rds On Max 3R
Nominal Vgs 1.7V
Package/Case TO-205AD
RoHS Compliant Yes
Contact Plating Tin, Matte
Package Quantity 100
Input Capacitance 50pF
Threshold Voltage 1.7V
Number of Channels 1
Reach SVHC Compliant Unknown
Max Power Dissipation 6.25W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 3R
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 990mA
Drain to Source Voltage (Vdss) 60V
Drain to Source Breakdown Voltage 60V

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