2N7002 TR PBFREE
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Краткое описание:
N-Channel Enhancement-Mode MOSFET, 60V, 115mA
Дополнительная информация
The CENTRAL SEMICONDUCTOR 2N7002 type is an N-Channel enhancement-mode MOSFET manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications.
| RoHS | Lead Free / RoHS Compliant |
| Power Dissipation (PD) | 350mW |
| Gate-Source Voltage (VGS) | 40V |
| Drain-Source Voltage (VDS) | 60V |
| Continuous Drain Current (ID) | 115mA |
| Gate Threshold Voltage (VGS(th)) | 1.0 to 2.5V |
| Operating and Storage Junction Temperature | -65 to +150°C |
| Drain-Source On-Resistance (rDS(ON)) @ VGS=10V | 7.5Ω |
| Thermal Resistance, Junction to Ambient (ΘJA) | 357°C/W |