2N7002-T1-E3
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Краткое описание:
N-CH MOSFET, 60V, 115mA, 7.5R, SOT-23
Дополнительная информация
N-channel MOSFET transistor featuring a 60V drain-source breakdown voltage and 115mA continuous drain current. This general-purpose small signal FET offers a low drain-source on-resistance of 7.5 Ohms and a gate-source voltage rating of 20V. Packaged in a compact TO-236 (SOT-23) surface-mount case, it operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 200mW.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.4mm |
| Height | 1.02mm |
| Length | 3.04mm |
| Weight | 0.050717oz |
| Voltage | 60V |
| Polarity | N-CHANNEL |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 7.5R |
| Nominal Vgs | 2.1V |
| Package/Case | TO-236 |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 50pF |
| Power Dissipation | 200mW |
| Threshold Voltage | 2.1V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 200mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 7.5R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 115mA |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 7.5R |
| Drain to Source Breakdown Voltage | 60V |
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