2N7002DW-7-F
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Краткое описание:
N-Channel JFET, 60V, 115mA, 2-Element, SOT-363, SMD
Дополнительная информация
N-channel, dual-element, silicon Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) designed for small signal applications. Features a 60V Drain to Source Breakdown Voltage and a continuous drain current of 115mA. Offers a low Drain-source On Resistance of 7.5 Ohms maximum. Packaged in a compact SOT-363 surface mount package, this RoHS compliant component operates across a wide temperature range from -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.35mm |
| Height | 1mm |
| Length | 2.2mm |
| Weight | 0.000212oz |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 7.5R |
| Nominal Vgs | 2V |
| Termination | SMD/SMT |
| Package/Case | SOT-363 |
| Current Rating | 115mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | 60V |
| Package Quantity | 3000 |
| Input Capacitance | 50pF |
| Power Dissipation | 400mW |
| Threshold Voltage | 2V |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Turn-On Delay Time | 7ns |
| Dual Supply Voltage | 60V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 11ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 200mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 4.4R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 115mA |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 7.5R |
| Drain to Source Breakdown Voltage | 70V |
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