2N7002DW-TP
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Dual N-Channel MOSFET, 60V, 115mA, SOT-363
Дополнительная информация
Dual N-Channel MOSFET in SOT-363 package. Features 60V Drain to Source Breakdown Voltage (Vdss) and 115mA Continuous Drain Current (ID). Offers 7.5 Ohm Rds On Max and 1.5V Threshold Voltage. Operates from -55°C to 150°C with 200mW Max Power Dissipation. Surface mount, RoHS compliant, and available on tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 7.5R |
| Package/Case | SOT-363 |
| Current Rating | 115mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | 70V |
| Input Capacitance | 50pF |
| Power Dissipation | 200mW |
| Threshold Voltage | 1.5V |
| Number of Elements | 2 |
| Turn-Off Delay Time | 11ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 200mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 13.5R |
| Continuous Drain Current (ID) | 115mA |
| Drain to Source Voltage (Vdss) | 60V |
| Drain to Source Breakdown Voltage | 60V |
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